Original Article | 2009, Vol.31, No.1, pp. 111-115
Low temperature synthesized indium tin oxide nanowires
Paisan Setasuwon and Suphakan Kijamnajsuk
pp. 111 - 115
Abstract
Directional indium tin oxide (ITO) nanowires were successfully grown on SiO2 /Si at temperatures ranging from approximately 640°C to 800°C and pressure of about 300 mtorr using SnO and In powders. The results show that growth temperature strongly affects the morphology and composition of ITO nanostructures. The X-ray diffraction indicates the presence of both cubic In2O3 and tetragonal SnO2 phases in ITO nanowires. Energy dispersive X-ray spectroscopy shows that the atomic ratio of Sn/In decreases with the increase of growth temperature. The observed particles at the tip of the nanowires indicate that the growth of these nanowires is facilitated by the catalyst-assisted vapor-liquid-solid growth mechanism.
