Andri Cahyo Kumoro, Hadiyanto, and Heru Susanto

pp. 563 - 568

Abstract

This work aimed to investigate the effects of hazardous compounds (NO and SO₂
) in flue gas on Chlorella JPR-1
growth in a raceway pond photobioreactor at ambient temperature (30 °C) without pH control. Chlorella JPR-1 exhibited its
tolerant to CO₂
 content in the flue gas as high as 50%. The maximum carbon fixation rate (1.84 g CO₂
/L.day) observed when
the flue gas contained 10% CO₂
. Although the specific growth rate was 25.88% lower than the control culture when cultivated
with 50 ppm SO₂
, Chlorella JPR-1 still could grow when cultured with 100 ppm SO₂
 with slightly longer lag phase period.
A growth rate reduction of 3.53% of the control culture was observed when Chlorella JPR-1 was cultured with flue gas
containing 50 ppm NO. This study has shown that Chlorella JPR-1 has a high potential to be used for CO₂
 fixation from flue
gas.