Chitnarong Sirisathitkul, Haruthai Longkullabutra, Praiwan Kirdtongmee, Said Aslam, and John Gregg

pp. 305 - 310

Abstract

The Lorentz force gives rise to helical paths of moving charged particles in a magnetic field and
these, in turn, result in reduction of mean free paths and higher scattering rates. This effect may be observed
from magnetoresistance in a 1-µm thick silicon membrane. With a transverse current, the electrical resistance
of the p-type silicon increases by 0.4% in a 1.6-tesla magnetic field at room temperature. The magnetoresistance
increases to 1% at 250K. The plot of electrical resistance versus magnetic field can be approximated as a
parabola and the hole mobility may be determined as 405 cm²/Vs at 290K and 610 cm²/Vs at 250 K.