Paisan Setasuwon and Suphakan Kijamnajsuk

pp. 111 - 115

Abstract

Directional indium tin oxide (ITO) nanowires were successfully grown on SiO₂ /Si at temperatures ranging from approximately 640°C to 800°C and pressure of about 300 mtorr using SnO and In powders. The results show that growth temperature strongly affects the morphology and composition of ITO nanostructures. The X-ray diffraction indicates the
presence of both cubic In₂O₃ and tetragonal SnO₂ phases in ITO nanowires. Energy dispersive X-ray spectroscopy shows that the atomic ratio of Sn/In decreases with the increase of growth temperature. The observed particles at the tip of the nanowires indicate that the growth of these nanowires is facilitated by the catalyst-assisted vapor-liquid-solid growth mechanism.